| PART |
Description |
Maker |
| KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| V62C2161024LL-55T V62C2161024LL-85T V62C2161024L V |
64K X 16 STANDARD SRAM, 100 ns, PDSO44
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| IS61C6416AL-12TI-TR IS64C6416AL-15TLA3 IS65C6416AL |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
List of Unclassifed Manufac...
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128Kx8 EEPROM
64K - BIT CMOS E2PROM
|
Atmel, Corp.
CATALYST[Catalyst Semiconductor]
|
| AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28
8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28
64K (8K X 8) CMOS E2PROM
64K 8K x 8 CMOS E2PROM
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
